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| TELEFUNKEN Semiconductors TBA120T FM IF amplifier and demodulator Technology: Bipolar Features D Input and demodulator provided for operating with ceramic-resonators D No selection of volume-input characteristics D Independent sound output for VTR and headphone Case: 14 pin dual inline plastic D Additional sound input D High ripple rejection D High residual carrier suppression prevents harmonic distortions Figure 1 Block diagram Pin Configuration Pin 1 2, 13 3 4 5 Symbol GND Vi(AF) Vref V5 Function Ground Feedback AF input - SCART Reference voltage Volume control Pin 6,7,9,10 8 11 12 14 Symbol Vo(AF)1 VS Vo(AF)2 Vi(IF) Function FM demodulator filter AF output - controlled Supply voltage AF output - uncontrolled IF input Rev. A1: 20.12.1994 1 TBA120T Absolute Maximum Ratings Reference point pin 1, unless otherwise specified Parameters Supply voltage Pin 11 Volume setting voltage Pin 5 Reference supply current Pin 4 Power dissipation Tamb = 60C Ambient temperature range Storage temperature range Symbol VS V5 IRef Ptot Tamb Tstg TELEFUNKEN Semiconductors Value 18 6 5 400 -15 to +70 -25 to +125 Unit V V mA mW C C Electrical Characteristics Tamb = +25C, VS = 12 V, f = 5.5 MHz, Figure 3, reference point pin 1, unless otherwise specified Parameters Supply voltage range Supply current Reference voltage Output resistance Frequency range IF voltage gain Limited IF output voltage Input limiting voltage Input impedance AM rejection DC voltage at AF output Ripple rejection IF residual voltage Test Conditions / Pins Pin 11 Pin 11 Pin 4 Pin 4 Pin 6/14 Pin 6 - 10 Df =" 50 kHz, fmod = 1 kHz Pin 14 Pin 14 m = 30 %, Df =" 50 kHz, Vi = 500 mV, fmod = 1 kHz Vi = 0 Pin 8 Pin 12 Pin 11/8 Pin 11/12 without de-emphasis capacitor Pin 8 Pin 12 Vi = 10 mV, Df ="50 kHz, fmod = 1 kHz, R5 = 20 kW Pin 8 Pin 12 Pin 8, 12 R5 = 20 kW, Pin 8/3 R5 = 13 kW, Fig. 3 Pin 8 Pin 8 Pin 3 Pin 2 or 13 Figure 2 Symbol VS IS VoRef rRef f GIF Vo(IF)pp Vi(IF) Ri Ci kAM Vo(AF)1 Vo(AF)2 kBr kBr Vo(IF)1 Vo(IF)2 Min. 10 9.5 4.2 Typ. Max. 18 17.5 5.5 Unit V mA V W MHz dB mV mV W pF dB V V dB 4.8 12 0 to 12 68 250 30 800 5 60 4 5.6 35 30 20 30 60 50 mV AF output voltage Vo(AF)1 Vo(AF)2 ro Gv1 -Gv1 DVo(AF)1 ri Isw Vmute 650 400 900 650 1.1 7.5 30 85 2 mV mV kW dB dB dB kW mA V Rev. A1: 20.12.1994 Output resistance AF voltage amplification AF damping Volume setting range Input resistance Mute function Switching current Switching voltage 2 24 70 34 400 3 TELEFUNKEN Semiconductors TBA120T Figure 2 Figure 3 Test circuit Rev. A1: 20.12.1994 3 TBA120T Dimensions in mm Package: JEDEC MO 001, DIP 14-leads TELEFUNKEN Semiconductors We reserve the right to make changes to improve technical design without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use TEMIC products for any unintended or unauthorized application, the buyer shall indemnify TEMIC against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. TEMIC TELEFUNKEN microelectronic GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 ( 0 ) 7131 67 2831, Fax Number: 49 ( 0 ) 7131 67 2423 4 Rev. A1: 20.12.1994 |
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